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| Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 (0.4) Unit: mm 6.90.1 (1.5) (1.5) 3.50.1 2.50.1 (1.0) (1.0) 2.00.2 2.40.2 Features * Optimum for RF amplification of FM/AM radios * High transition frequency fT * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board R 0.9 R 0.7 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 30 20 5 30 60 400 150 -55 to +150 Unit V V V mA mA mW C C 3 1.00.1 (0.85) 1.250.05 0.450.05 0.550.1 2 (2.5) 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Symbol VCBO VCEO VEBO VBE hFE VCE(sat) fT NF Cre Zrb Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 1 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz Min 30 20 5 Typ Max Unit V V V 0.7 70 0.1 150 300 2.8 4 1.5 50 220 V V MHz dB pF Collector-emitter saturation voltage Transition frequency Noise figure Common-emitter reverse transfer capacitance Reverse transfer impedance Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 140 C 110 to 220 4.10.2 4.50.1 Publication date: January 2003 SJC00111BED 1 2SC2206 PC Ta 500 12 IC VCE Ta = 25C IB = 100 A IC I B 15.0 VCE = 10 V Ta = 25C 12.5 Collector power dissipation PC (mW) 400 10 Collector current IC (mA) 8 80 A 60 A Collector current IC (mA) 10.0 300 6 7.5 200 4 40 A 5.0 100 2 20 A 2.5 0 0 20 40 60 80 100 120 140 160 0 0 6 12 18 0 0 20 40 60 80 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (A) IB VBE 120 VCE = 10 V Ta = 25C 100 60 IC VBE VCE = 10 V VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 50 Collector current IC (mA) Base current IB (A) 10 80 40 Ta = 75C 30 25C -25C 60 1 Ta = 75C 25C 0.1 -25C 40 20 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10 100 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE IC 240 VCE = 10 V 400 350 fT I E 60 Zrb IE Ta = 25C Forward current transfer ratio hFE 200 Reverse transfer impedance Zrb () VCB = 10 V 6V 50 VCB = 10 V f = 2 MHz Ta = 25C Transition frequency fT (MHz) 300 250 200 150 100 50 160 Ta = 75C 25C 40 120 -25C 80 30 20 40 10 0 0.1 1 10 100 0 - 0.1 -1 -10 -100 0 - 0.1 -1 -10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 2 SJC00111BED 2SC2206 Cre VCE Common-emitter reverse transfer capacitance Cre (pF) 3.0 f = 10.7 MHz Ta = 25C 2.5 GP IE 24 f = 100 MHz VCE = 10 V Ta = 25C 12 NF IE VCB = 6 V f = 100 MHz Rg = 50 Ta = 25C 20 10 2.0 IC = 3 mA 1.5 1 mA 16 Noise figure NF (dB) -1 -10 -100 Power gain GP (dB) 8 12 6 1.0 8 4 0.5 4 2 0 0.1 1 10 100 0 - 0.1 0 - 0.1 -1 -10 Collector-emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) bie gie 24 bre gre 0 bfe gfe 0 20 Input susceptance bie (mS) -4 mA 16 -2 mA 58 -7 mA 100 - 0.1 IE = -1 mA Forward transfer susceptance bfe (mS) Reverse transfer susceptance bre (mS) yie = gie + jbie VCE = 10 V yre = gre + jbre VCE = 10 V f = 10.7 MHz -20 f = 10.7 MHz - 0.1 mA 58 -1 mA 100 58 -2 mA 100 10.7 - 0.2 -40 IE = -1 mA 12 - 0.3 58 -60 IE = -4 mA 100 58 8 f = 10.7 MHz 4 - 0.4 100 -80 - 0.5 -100 yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100 0 0 8 16 24 32 40 - 0.6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe goe 1.2 yoe = goe + jboe VCE = 10 V 1.0 Output susceptance boe (mS) 0.8 IE = -1 mA 100 0.6 58 0.4 0.2 f = 10.7 MHz 0 0.1 0.2 0.3 0.4 0.5 0 Output conductance goe (mS) SJC00111BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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